Inductively coupled dual zone processing chamber with single planar antenna

ABSTRACT

A dual zone plasma processing chamber is provided. The plasma processing chamber includes a first substrate support having a first support surface adapted to support a first substrate within the processing chamber and a second substrate support having a second support surface adapted to support a second substrate within the processing chamber. One or more gas sources in fluid communication with one or more gas distribution members supply process gas to a first zone adjacent to the first substrate support and a second zone adjacent to the second substrate support. A radio-frequency (RF) antenna adapted to inductively couple RF energy into the interior of the processing chamber and energize the process gas into a plasma state in the first and second zones. The antenna is located between the first substrate support and the second substrate support.

BACKGROUND

Plasma processing apparatuses are used to process substrates bytechniques including etching, physical vapor deposition (PVD), chemicalvapor deposition (CVD), ion implantation, and resist removal. One typeof plasma processing apparatus used in plasma processing includes anexternal induction antenna. An electromagnetic field is generated in thechamber underlying the antenna to excite a process gas into the plasmastate to process substrates in the reaction chamber.

SUMMARY

A dual zone plasma processing chamber is provided. The plasma processingchamber includes a first substrate support having a first supportsurface adapted to support a first substrate within the processingchamber and a second substrate support having a second support surfaceadapted to support a second substrate within the processing chamber. Oneor more gas sources in fluid communication with one or more gasdistribution members supply process gas to a first zone adjacent to thefirst substrate support and a second zone adjacent to the secondsubstrate support. A radio-frequency (RF) antenna adapted to inductivelycouple RF energy into the interior of the processing chamber andenergize the process gas into a plasma state in the first and secondzones. The antenna is located between the first substrate support andthe second substrate support.

A method of simultaneously processing first and second semiconductorsubstrates in a plasma processing chamber is provided. A first substrateis placed on a first substrate support and a second substrate on thesecond substrate support in the dual zone plasma processing chamber.Process gases from the one or more gas sources are discharged into thefirst zone between the antenna and the first substrate and into thesecond zone between the antenna and the second substrate. A first plasmais generated from the first process gas in the first zone. A secondplasma is generated from the second process gas in the second zone. Thefirst substrate is processed with the first plasma and the secondsubstrate is processed with the second plasma.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a cross-sectional view of an inductively coupled plasmaprocessing apparatus for processing a single substrate.

FIG. 2 is a cross-sectional view of an inductively coupled dual zoneplasma processing apparatus for processing two vertically spaced apartsubstrates in a horizontal configuration under the same processingconditions.

FIG. 3 is a cross-sectional view of an inductively coupled plasmaprocessing apparatus for processing two horizontally spaced apartsubstrates in a vertical configuration under the same processingconditions.

FIG. 4 is a cross-sectional view of an inductively coupled plasmaprocessing apparatus for processing two vertically spaced apartsubstrates in a horizontal configuration under different processingconditions.

DETAILED DESCRIPTION

Inductively coupled plasma processing chambers are generally used fordepositing (e.g., plasma enhanced chemical vapor deposition or PECVD)and plasma etching of materials on substrates by supplying process gasinto a vacuum chamber at a low pressure (i.e., below 50 mTorr) and theapplication of radio-frequency (RF) energy to the gas. The substratescan be held in place within the vacuum chamber during processing bysubstrate holders including mechanical clamps and electrostatic clamps(ESC). For inductively coupled plasma (ICP) systems, an RF antenna islocated outside the process chamber and the RF energy is inductivelycoupled into the chamber through a dielectric window. Such processingsystems can be used for a variety of semiconductor processingapplications such as etching, deposition, or resist stripping.

FIG. 1 is a cross-sectional view of an embodiment of an ICP plasmaprocessing chamber 10. An example of an ICP plasma processing chamber isthe TCP® etch or deposition system, manufactured by Lam ResearchCorporation, Fremont, California. The ICP plasma processing chamber isalso described, for example, in commonly-owned U.S. Pat. No. 4,948,458,which is incorporated by reference in its entirety. Processing chamber10 includes a substrate support 12 with support surface 14. The supportsurface 14 is adapted to support substrate 16. A vacuum pump 18 isattached to pump port 20 to maintain the interior processing chamber 10at a low pressure (e.g., between about 1 mTorr to about 50 mTorr). A gassource 22 supplies process gases to the interior of processing chamber10 through a gas distribution plate, showerhead arrangement, injector orother suitable arrangement. Process gases can be introduced by the gasdistribution member 24 to a zone adjacent to substrate 16.

Once process gases are introduced into the interior of processingchamber 10, they are energized into a plasma state by an energy sourcesupplying energy into the interior of the processing. chamber 10.Preferably, the energy source is an external planar antenna 26 poweredby an RF source 28 and RF impedance matching circuitry 30 to inductivelycouple RF energy into processing chamber 10. An electromagnetic fieldgenerated by the application of RF power to planar antenna 26 energizesthe process gas to form a high-density plasma 30 (e.g., 10¹¹-10¹²ions/cm³) above substrate 16.

A dielectric window 32 underlies planar antenna 26 and forms the topwall of plasma processing chamber 10. The gas distribution member 24 isplaced below dielectric window 32. High-density plasma 30 is generatedin the zone between gas distribution member 24 and substrate 16, foreither deposition or etching of substrate 16.

In order to increase production efficiency while minimizing powerrequirements, described herein is a novel dual zone plasma processingchamber which can simultaneously process two substrates on oppositesides of a single planar antenna. One approach for maximizing thesymmetrical electromagnetic fields generated by planar antenna 18 is thedual-zone configuration of the FIG. 2 embodiment. FIG. 2 is across-sectional view of an embodiment of a dual-zone ICP plasmaprocessing chamber 100, including zones 110, 210. Zones 110, 210 ofprocessing chamber 100 include the spaces between dielectric windows132, 232 and substrate supports 112, 212 with horizontal supportsurfaces 114, 214, respectively. Support surfaces 114, 214 are adaptedto support substrates 116, 216 in a horizontal position. Substratesupports 112, 212 can be supported in a cantilever manner by supportarms extending from the chamber walls and are diametrically opposite oneanother in processing chamber 100.

Vacuum pumps 118, 218 are attached to pump ports 120, 220 to maintainthe interior of processing chamber 100 at a low pressure (e.g., betweenabout 1 mTorr to about 50 mTorr). Pump ports 120, 220 are adjacent tosubstrate supports 120, 220 and can be diametrically opposite oneanother in processing chamber 100.

Common gas source 122 supplies process gases to the interior ofprocessing chamber 100 to zones 110, 210. Process gases can beintroduced into any suitable gas distribution arrangement, e.g. adual-ended gas injector or distribution member 124 adjacent tosubstrates 116, 216, respectively. Use of the common gas source 122 andgas distribution members 124 ensure delivery of the same gascompositions to zones 110 and 210. The gas distribution arrangement caninclude two gas distribution members (e.g., gas distribution rings, gasdistribution plates or gas injection nozzles) in fluid communicationwith one another and connected by a common passage 125, extendingthrough an opening in dielectric windows 132, 232. Such gas distributionmembers are also described, for example, in commonly-owned U.S. Pat.Nos. 6,184,158 and 6,230,651, which are incorporated by reference intheir entirety. The location of pump ports 120, 220 and vacuum pumps118, 218 at opposite ends of the chamber 100 facilitates distribution ofthe process gas uniformly across the surfaces of substrates 116, 216.

Substrates 116, 216 are held in place on substrate supports 112, 212.The substrate supports can include electrostatic chucks (ESC),mechanical clamps, or other clamping mechanisms. Such substrate supportsare also described, for example, in commonly-owned U.S. Pat. Nos.5,262,029 and 5,838,529, which are incorporated by reference in theirentirety. Substrate supports 112, 212 can also include an RF biasingelectrode (not shown). For temperature control of the substrates 116,216, the substrates 116, 216 can be cooled by flowing helium gas beneaththe substrate and the substrate supports 112, 212 can be liquid cooled(not shown). Such temperature control is described in commonly ownedU.S. Pat. No. 6,140,612, which is incorporated by reference in itsentirety.

Once process gases are introduced into the interior of processing zones110, 120, they are energized into a plasma state by a single externalplanar antenna 126 which supplies RF energy in opposite directions intozones 110, 120 in the interior of the processing chamber 100. Theexternal planar antenna 126 is powered by a single RF source 128 and RFimpedance matching circuitry 130 to inductively couple RF energy intoprocessing chamber 100. The symmetric electromagnetic field generatedabove and below planar antenna 126 by the application of RF powerenergizes the process gases to form high-density plasmas 130, 230 (e.g.,10¹¹-10¹² ions/cm³) in zones vertically adjacent to substrates 116, 216.The configuration of processing chamber 100 has the potential ofdoubling the substrate processing throughput within the footprint of achamber used for single substrate processing and without the expenditureof additional RF energy which would be required for running twoprocessing chambers.

The single external planar antenna 126 can comprise one or more planarspiral coils or other configurations such as a series of concentricrings. A planar coil can be scaled-up by employing a longer conductiveelement to increase the antenna diameter and therefore accommodatelarger substrates such as 300 mm wafers or multiple coils arranged in aplanar array could be used to generate a uniform plasma over a widearea, such as for flat panel display processing.

The external planar antenna 126 is located in a space 134 which is atambient pressure (i.e., atmospheric pressure). The space 134 is betweendielectric window 132 and dielectric window 232. Dielectric windows 132,232 can be composed of any dielectric material that is transparent to RFenergy, such as quartz. Dielectric window 132 underlies planar antenna126 and forms an upper wall relative to zone 110. Likewise, dielectricwindow 232 overlies planar antenna 126 and forms a lower wall relativeto zone 210. In one embodiment, space 134 is enclosed in a metalliccompartment supporting dielectric windows 132, 232 as walls of thecompartment.

When substrates 116, 216 are processed in processing chamber 100, the RFsource 128 supplies the antenna 126 with RF current preferably at arange of about 100 kHz-27 MHz, and more preferably at 13.56 MHz.

FIG. 3 is a cross-sectional view of another embodiment of a dual-zoneICP plasma processing chamber 300, including zones 310, 410. Other thanthe orientation of the processing chamber 100, the configuration ofplasma processing chamber 300 is similar to the plasma processingchamber 100 in FIG. 2. Zones 310, 410 of processing chamber 300 includethe spaces between dielectric windows 332, 432 and substrate supports312, 412 with vertical support surfaces 314, 414, respectively. Supportsurfaces 314, 414 are adapted to support substrates 316, 416 in avertical position. Substrate supports 312, 412 are preferablydiametrically opposite one another in processing chamber 300. Vacuumpumps 318, 418 are attached to pump ports 320, 420 to maintain theinterior of processing chamber 300 at a low pressure (e.g., betweenabout 1 mTorr to about 50 mTorr). Pump ports 320, 420 are adjacent tosubstrate supports 312, 412 and are preferably diametrically oppositeone another in processing chamber 300.

Common gas source 322 supplies process gases to the interior ofprocessing chamber 300. Process gases can be introduced into anysuitable gas distribution arrangement, e.g. a dual-ended gas injector ordistribution member 324 adjacent to substrates 316, 416, respectively.The gas distribution arrangement can include two gas distributionmembers (e.g., gas distribution rings, gas distribution plates or gasinjection nozzles) in fluid communication with one another and connectedby a common passage 325, extending through an opening in dielectricwindows 332, 432.

Substrates 316, 416 are held in place on substrate supports 312, 412.The substrate supports can include electrostatic chucks (ESC),mechanical clamps, or other clamping mechanisms. Substrate supports 312,412 can also include an RF biasing electrode (not shown). Fortemperature control of the substrates 316, 416, the substrates 316, 416can be cooled by flowing helium gas beneath the substrates and thesubstrate supports 316, 416 can be liquid cooled (not shown).

Once process gases are discharged into the interior of processing zones310, 410, they are energized into a plasma state by a single antennaarrangement supplying energy into the interior of the processing chamber300. Preferably, the energy source is an external planar antenna 326powered by an RF source 328 and RF impedance matching circuitry 330 toinductively couple RF energy into processing chamber 300. The symmetricelectromagnetic field generated by planar antenna 326 through theapplication of RF power energizes the process gas to form high-densityplasmas 330, 430 (e.g., 10¹¹-10¹² ions/cm³), laterally adjacent tosubstrates 316, 416. Similar to processing chamber 100 of FIG. 2, theconfiguration of processing chamber 300 has the potential of doublingthe substrate processing throughput without the expenditure ofadditional RF energy.

The external planar antenna 326 is supported in space 334 which is atambient pressure between dielectric window 332 and dielectric window432. Dielectric windows 332, 432 can be composed of any dielectricmaterial that is transparent to RF energy, such as quartz. Dielectricwindow 332 is laterally adjacent to planar antenna 326 and forms a sidewall relative to zone 310. Likewise, dielectric window 432, alsolaterally adjacent to planar antenna 326, forms a side wall relative tozone 410. In one embodiment, space 334 is enclosed in a metalliccompartment supporting dielectric windows 332, 432 as walls of thecompartment.

FIG. 4 is a cross-sectional view of another embodiment of a dual-zoneICP plasma processing chamber having sub-chambers 500, 600, includingzones 510, 610, to simultaneously process two substrates under differentprocessing conditions. Similar to the FIG. 2 embodiment, theconfiguration of processing sub-chambers 500, 600 includes horizontalsupport surfaces 514, 614.

Zones 510, 610 of sub-chambers 500, 600 include the spaces betweendielectric windows 532, 632 and substrate supports 512, 612 withhorizontal support surfaces 514, 614, respectively. Support surfaces514, 614 are adapted to support substrates 516, 616 in a horizontalposition. Substrate supports 512, 612 can be diametrically opposite oneanother. Vacuum pumps 518, 618 are attached to pump ports 520, 620 tomaintain the interior of processing chamber 300 at a low pressure (e.g.,between about 1 mTorr to about 50 mTorr). Pump ports 520, 620 areadjacent to substrate supports 512, 612 and can be diametricallyopposite one another.

Gas sources 522, 622 supply process gases to the interior of processingchamber 300. Process gases can be introduced into the gas distributionsmembers 524, 624 adjacent to substrates 516, 616. If substrates 516, 616are subjected to different plasma processing conditions, gas sources522, 622 can supply different gas recipes. For example, substrate 516can undergo an etching process, while substrate 616 undergoes a chemicalvapor deposition process and vice versa. Examples of etching processesinclude conductor etching, dielectric etching or photoresist stripping.Examples of deposition processes include the chemical vapor depositionof dielectric or conductive films. Gas distribution member 524, 624 caninclude gas distribution rings, gas distribution plates or gas injectionnozzles. The process gases in zones 510, 610 are energized uponsupplying RF energy to planar antenna 526, forming plasmas 530, 630 forthe plasma processing of substrates 516, 616.

If different process gases from gas sources 522, 622 are used togenerate plasmas 530, 630, it becomes necessary to isolate processingsub-chambers 500, 600 with partition 536. Because different gaschemistries are used to generate plasmas 530, 630 and produce differentby-products, in the absence of partition 536, the different processgases released from gas distribution members 524, 624 and by-products ofthe processing may diffuse towards unintended regions of the processingchambers 500, 600, rather than uniformly over the surface of substrates516, 616.

Substrates 516, 616 are held in place on substrate supports 512, 612.The substrate supports can include electrostatic chucks (ESC),mechanical clamps, or other clamping mechanisms. Substrate supports 512,612 can also include an RF biasing electrode (not shown). Fortemperature control of the substrates 516, 616, the substrates 516, 616can be cooled by flowing helium gas beneath the substrates and thesubstrate supports 516, 616 can be liquid cooled (not shown).

Once process gases are discharged into the interior of processing zones510, 610, they are energized into a plasma state by a single antennaarrangement supplying energy into the interior of the processingchambers 500, 600. Preferably, the energy source is an external planarantenna 526 powered by an RF source 528 and RF impedance matchingcircuitry 530 to inductively couple RF energy into processing chambers500, 600. The symmetric electromagnetic field generated by planarantenna 526 through the application of RF power energizes the processgas to form high-density plasmas 530, 630 (e.g., 10¹¹-10¹² ions/cm³),laterally adjacent to substrates 516, 616. Similar to processingchambers 200, 300 of FIGS. 2 and 3, the configuration of processingchambers 500, 600 has the potential of doubling the substrate processingthroughput without the expenditure of additional RF energy.

The external planar antenna 526 is supported in space 534 which is atambient pressure between dielectric window 532 and dielectric window532. Dielectric windows 532, 632 can be composed of any dielectricmaterial that is transparent to RF energy, such as quartz. Dielectricwindow 532 is laterally adjacent to planar antenna 526 and forms a topwall relative to zone 510. Likewise, dielectric window 632, alsolaterally adjacent to planar antenna 526, forms a bottom wall relativeto zone 610. In one embodiment, space 534 is enclosed in a metalliccompartment supporting dielectric windows 532, 632 as walls of thecompartment.

In another embodiment for simultaneously process two substrates underdifferent processing conditions, the configuration of the processingsub-chambers to can include vertical support surfaces, similar to theFIG. 3 embodiment.

While the invention has been described in detail with reference tospecific embodiments thereof, it will be apparent to those skilled inthe art that various changes and modifications can be made, andequivalents employed, without departing from the scope of the appendedclaims.

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 15. (canceled)16. A method of simultaneously processing first and second semiconductorsubstrates in a plasma processing chamber comprising: placing a firstsubstrate on the first substrate support and a second substrate on thesecond substrate support in the plasma processing chamber of a dual zoneplasma processing chamber, comprising: a first substrate support havinga first support surface adapted to support a first substrate within theprocessing chamber; a second substrate support having a second supportsurface adapted to support a second substrate within the processingchamber; one or more gas sources in fluid communication with one or moregas distribution members supplying process gas to a first zone adjacentto the first substrate support and a second zone adjacent to the secondsubstrate support; and a radio-frequency (RF) antenna adapted toinductively couple RF energy into the interior of the processing chamberand energize the process gas into a plasma state in the first and secondzones, wherein the antenna is located between the first substratesupport and the second substrate support; discharging process gases fromthe one or more gas sources into the first zone between the antenna andthe first substrate and into the second zone between the antenna and thesecond substrate; generating a first plasma from the process gas in thefirst zone and a second plasma from the process gas in the second zone;and simultaneously processing the first substrate with the first plasmaand the second substrate with the second plasma.
 17. The method of claim16, wherein the same process gas is discharged into the first zone andthe second zone.
 18. The method of claim 16, wherein processing thefirst substrate and the second substrate includes deposition ofconductive or dielectric material.
 19. The method of claim 16, whereinprocessing the first substrate and the second substrate includeshigh-density plasma etching of metals, dielectrics or photoresiststripping.
 20. The method of claim 16, wherein a first process gas isdischarged into the first zone, a second process gas is discharged intothe second zone, the first substrate is plasma etched and the secondsubstrate is subjected to plasma enhanced chemical vapor deposition. 21.The method of claim 16, wherein the antenna is a planar coil in acompartment at ambient pressure.
 22. The method of claim 21, wherein thecompartment is between first and second dielectric windows, the firstdielectric window positioned between the planar coil and the firstsupport surface and the second dielectric window positioned between theplanar coil and the second support surface.
 23. The method of claim 22,wherein the planar coil inductively couples RF power through the firstdielectric window to form a first plasma in the first zone between thefirst dielectric window and the first support surface; and inductivelycouples RF power through the second dielectric window to form a secondplasma in the second zone between first dielectric window and the firstsupport surface.
 24. The method of claim 22, wherein the first andsecond dielectric windows are transparent to RF energy.
 25. The methodof claim 22, wherein the one or more gas distribution members comprise adual-ended injector extending through the first dielectric window andthe second dielectric window, wherein the one or more gas sourcessupplies the same process gas to the dual-ended injector.
 26. The methodof claim 22, wherein the one or more gas distribution members includes afirst gas distribution member adjacent to the first dielectric windowand a second gas distribution member adjacent to the second dielectricwindow, wherein the one or more gas sources includes a first gas sourceand a second gas source, the first gas source supplying a first processgas to the first gas distribution member and the second gas sourcesupplying a second process gas to the second gas distribution member.27. The method of claim 26, wherein the first and second gasdistribution members are gas distribution rings, gas distribution platesor gas injection nozzles.
 28. The method of claim 26, wherein the plasmaprocessing chamber includes separate sub-chambers, the first substratesupport and second substrate support being located in the separatesub-chambers.
 29. The method of claim 21, wherein the first supportsurface is parallel to the second support surface.
 30. The method ofclaim 21, wherein the antenna is located midpoint between the first andsecond substrate supports.
 31. The method of claim 21, wherein the firstsupport surface, and second support surface are vertically spaced apart.32. The method of claim 21, wherein the first support surface and secondsupport surface are horizontally spaced apart.
 33. The method of claim21, wherein the first and second substrate supports includeelectrostatic chucks or mechanical clamps.
 34. The method of claim 21,further comprising a first pump port adjacent to the first substratesupport and a second pump port adjacent to the second substrate support,the first pump port being diametrically opposite to the second pumpport.